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| DGS 20-018AS Gallium Arsenide Schottky Rectifier Preliminary Data IFAV = 23 A VRRM = 180 V CJunction = 33 pF VRSM V 180 VRRM V 180 Type A C TO-263 AB A DGS 20-018AS A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFAV IFAV IFSM TVJ Tstg Ptot Conditions TC = 25C; DC TC = 90C; DC TVJ = 45C; tp = 10 ms (50 Hz), sine Maximum Ratings 23 17 30 -55...+175 -55...+150 A A A C C W TC = 25C 48 Features Low forward voltage Very high switching speed Low junction capacity of GaAs - low reverse current peak at turn off Soft turn off Temperature independent switching behaviour High temperature operation capability Epoxy meets UL 94V-0 q q q q q q q Applications MHz Switched mode power supplies q (SMPs) q q q Small size SMPs High frequency converters Resonant converters Symbol IR VF CJ RthJC Weight Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 7.5 A; IF = 7.5 A; TVJ = 125C TVJ = 25C Characteristic Values typ. max. 2.0 2.0 0.8 0.8 33 3.1 2 1.0 mA mA V V pF K/W g VR = 100 V; TVJ = 125C Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 119 IXYS reserves the right to change limits, Conditions and dimensions. (c) 2001 IXYS All rights reserved 1-2 DGS 20-018AS 30 10 A IF 400 pF CJ 100 1 TVJ = 125C 25C 0.1 TVJ = 125C 0.01 0.0 0.5 1.0 1.5 VF V 2.0 10 0.1 1 10 100 V 1000 VR Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity versus blocking voltage 10 K/W Single Pulse Outline TO-263 AB 1 ZthJC 0.1 0.01 DGS10-015/018BS 0.00001 0.0001 0.001 0.01 0.1 1 t s 10 Dim. A A1 b b2 c c2 D D1 Fig. 3 typ. thermal impedance junction to case Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes: conduction forward characteristics turn off characteristics turn on characteristics Rectifier Diode by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR GaAs Schottky Diode by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 (c) 2001 IXYS All rights reserved 2-2 119 |
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